Dielectric Function of Native Oxide on Ion-Implanted GaAs

• Authors: M. Kulik , W. Rzodkiewicz , Ł. Gluba , A. Kobzev
• Languages of publication: EN

Abstracts

EN

The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne^{+}, Al^{+}, Ar^{+}, or In^{+} ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of 1 × 10^{16} cm^{-2} at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.

Keywords

EN

61.72.uj; 78.20.Ci; 78.20.-e

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 956-959

Dates

published

2013-05

Contributors

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

author

Ł. Gluba

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

A. Kobzev

• Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Joliot-Curie 6, 141980 Dubna, Moscow region, Russia

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Identifiers

DOI

10.12693/APhysPolA.123.956