Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne^{+} Ions

P. Węgierek; P. Billewicz

doi:10.12693/APhysPolA.123.948

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Acta Physica Polonica A

2013 | 123 | 5 | 948-951

Article title

Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne^{+} Ions

Authors

P. Węgierek , P. Billewicz

Content

http://przyrbwn.icm.edu.pl/APP/PDF/123/a123z5p43.pdf [remote]

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Abstracts

The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne^{+} ions (D = 1.5 × 10^{14} cm^{-2}, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of T_{a} = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Keywords

61.72.uj 61.72.Cc 72.80.Ey

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2013

Volume

123

Issue

Pages

948-951

Physical description

Dates

published

2013-05

References

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11. P. Żukowski, T. Kołtunowicz, J. Partyka, P. Węgierek, M. Kolasik, A.V. Larkin, J.A. Fedotova, A.K. Fedotov, F.F. Komarov, L. Vlasukova, Przegląd Elektrotechniczny 3, 247 (2008) (in Polish)
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Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv123n543kz

Identifiers

DOI

10.12693/APhysPolA.123.948