Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne^{+} Ions

• Authors: P. Węgierek , P. Billewicz
• Languages of publication: EN

Abstracts

EN

The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne^{+} ions (D = 1.5 × 10^{14} cm^{-2}, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of T_{a} = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Keywords

EN

61.72.uj; 61.72.Cc; 72.80.Ey

Discipline

• 61.72.Cc: Kinetics of defect formation and annealing
• 61.72.uj: III-V and II-VI semiconductors
• 72.80.Ey: III-V and II-VI semiconductors

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 948-951

Dates

published

2013-05

Contributors

author

P. Węgierek

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

author

P. Billewicz

• Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.123.948