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Abstracts
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne^{+} ions (D = 1.5 × 10^{14} cm^{-2}, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of T_{a} = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Discipline
Journal
Year
Volume
Issue
Pages
948-951
Physical description
Dates
published
2013-05
Contributors
author
- Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
author
- Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n543kz