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2013 | 123 | 5 | 948-951
Article title

Research on Mechanisms of Electric Conduction in the p-Type Silicon Implanted with Ne^{+} Ions

Content
Title variants
Languages of publication
EN
Abstracts
EN
The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne^{+} ions (D = 1.5 × 10^{14} cm^{-2}, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of T_{a} = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.
Keywords
EN
Year
Volume
123
Issue
5
Pages
948-951
Physical description
Dates
published
2013-05
References
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  • 9. P. Węgierek, M. Kowalski, Elektronika 9, 100 (2009) (in Polish)
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n543kz
Identifiers
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