EN
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of 3 × 10^{16} cm^{-2}. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O^{16}(α,α)O^{16} method. The chemical composition of native oxide layers on In^{+} implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As_{2}O_{3}, As_{2}O_{5}, Ga_{2}O_{3}, GaAs, InAs and InAsO_4 compounds were detected in these layers.