III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing

• Authors: S. Prucnal , M. Turek , K. Gao , S. Zhou , K. Pyszniak , A. Droździel , J. Żuk , W. Skorupa
• Languages of publication: EN

Abstracts

EN

Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO_2 and Si_3N_4 made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.

Keywords

EN

78.30.Fs; 78.67.Hc; 81.05.Ea; 81.07.Ta; 81.15.Lm

Discipline

• 78.67.Hc: Quantum dots
• 81.07.Ta: Quantum dots
• 81.15.Lm: Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
• 78.30.Fs: III-V and II-VI semiconductors
• 81.05.Ea: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 935-938

Dates

published

2013-05

Contributors

author

S. Prucnal

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
• Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany

author

M. Turek

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

K. Gao

• Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany

author

S. Zhou

• Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany

author

K. Pyszniak

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

A. Droździel

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

J. Żuk

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

W. Skorupa

• Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany

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Identifiers

DOI

10.12693/APhysPolA.123.935