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Abstracts
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in SiO_2 and Si_3N_4 made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
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Year
Volume
Issue
Pages
935-938
Physical description
Dates
published
2013-05
Contributors
author
- Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
- Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany
author
- Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany
author
- Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany
author
- Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
- Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf P.O. Box 510119, 01314 Dresden, Germany
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Publication order reference
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bwmeta1.element.bwnjournal-article-appv123n540kz