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Number of results
2013 | 123 | 5 | 926-928

Article title

Current-Voltage Characteristic Features of Diodes Irradiated with 170~MeV Xenon Ions

Content

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Languages of publication

EN

Abstracts

EN
Diodes manufactured on the wafers of single-crystalline silicon uniformly doped with phosphorus are studied. The wafer resistivity was 90 Ω cm. Xenon ions were implanted into the diodes from the side of the p^{+}-region (implantation energy 170 MeV, fluence Φp from 5 × 10^7 to 10^9 cm^{-2}). It is shown that the formation of a continuous irradiation damaged layer with the thickness of the order of magnitude of the average projective range creates prerequisites for the negative differential resistance in the current-voltage characteristics of the irradiated diodes.

Keywords

EN

Contributors

author
  • Belarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus
author
  • Belarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus
author
  • Belarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus
author
  • Belarusian State University, 4 Nezavisimosti Ave., BY-220030, Minsk, Belarus
author
  • JSK Integral, 12 Korzhenevskogo St., BY-220108 Minsk, Belarus
author
  • JSK Integral, 12 Korzhenevskogo St., BY-220108 Minsk, Belarus
author
  • Joint Institute for Nuclear Research, 6 Joliot-Curie, RU-141980 Dubna, Russia
author
  • Ruhr-Universitaet Bochum, 150 Universitaetsstr, D-44780 Bochum, Germany
  • Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

References

  • 1. A.G. Milnes, Deep Impurities in Semiconductors, Wiley, New York 1973
  • 2. M. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York 1970
  • 3. G.S. Gildenblat, S.S. Cohen, Int. J. Electron. 63, 375 (1987)
  • 4. M. Nastasi, J.W. Mayer, Ion Implantation and Synthesis of Materials, Springer, Berlin 2006
  • 5. A.R. Chelyadinskii, F.F. Komarov, Phys Usp. 46, 789 (2003)
  • 6. E. Barsoukov, J.R. Macdonald, Impedance Spectroscopy: Theory Experiment and Applications, Wiley, New York 2005
  • 7. N.A. Poklonski, N.I. Gorbachuk, M.I. Tarasik, S.V. Shpakovski, V.A. Filipenia, V.A. Skuratov, A. Wieck, T.N. Kołtunowicz, Acta Phys. Pol. A 120, 111 (2011)
  • 8. N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, V.A. Filipenia, S.B. Lastovskii, V.A. Skuratov, A. Wieck, V.P. Markevich, Microelectron. Reliabil. 50, 813 (2010)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv123n537kz
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