Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

• Authors: J. Fiedler , V. Heera , M. Voelskow , A. Mücklich , H. Reuther , W. Skorupa , G. Gobsch , M. Helm
• Languages of publication: EN

Abstracts

EN

Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO_2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO_2/Si and SiO_2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.

Keywords

EN

74.78.-w

Discipline

• 74.78.-w: Superconducting films and low-dimensional structures

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 916-919

Dates

published

2013-05

Contributors

author

J. Fiedler

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
• Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany

author

V. Heera

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

author

M. Voelskow

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

author

A. Mücklich

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

author

H. Reuther

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

author

W. Skorupa

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

author

G. Gobsch

• Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany

author

M. Helm

• Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany

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Identifiers

DOI

10.12693/APhysPolA.123.916