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2013 | 123 | 5 | 916-919
Article title

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

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EN
Abstracts
EN
Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO_2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO_2/Si and SiO_2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.
Keywords
EN
Publisher

Year
Volume
123
Issue
5
Pages
916-919
Physical description
Dates
published
2013-05
Contributors
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
  • Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
author
  • Experimental Physics, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau, Germany
author
  • Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 51 01 19, D-01314 Dresden, Germany
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n534kz
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