RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

• Authors: R. Ratajczak , A. Stonert , E. Guziewicz , S. Gierałtowska , T. Krajewski , G. Luka , L. Wachnicki , B. Witkowski , M. Godlewski
• Languages of publication: EN

Abstracts

EN

The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.

Keywords

EN

77.55.hf; 81.05.Dz; 81.15.Hi; 68.55.ag; 82.80.Yc; 61.85.+p

Discipline

• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 81.05.Dz: II-VI semiconductors
• 68.55.ag: Semiconductors
• 82.80.Yc: Rutherford backscattering (RBS), and other methods of chemical analysis
• 77.55.hf: ZnO
• 61.85.+p: Channeling phenomena (blocking, energy loss, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 899-903

Dates

published

2013-05

Contributors

author

R. Ratajczak

• National Centre for Nuclear Research, Hoża 69, 00-681 Warsaw, Poland

author

A. Stonert

• National Centre for Nuclear Research, Hoża 69, 00-681 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

T. Krajewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

G. Luka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

L. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.123.899