PL EN


Preferences help
enabled [disable] Abstract
Number of results
2013 | 123 | 5 | 899-903
Article title

RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

Content
Title variants
Languages of publication
EN
Abstracts
EN
The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
Keywords
Contributors
author
  • National Centre for Nuclear Research, Hoża 69, 00-681 Warsaw, Poland
author
  • National Centre for Nuclear Research, Hoża 69, 00-681 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668, Warsaw, Poland
References
  • 1. M. Godlewski, E. Guziewicz, T. Krajewski, P. Kruszewski, Ł. Wachnicki, K. Kopalko, A. Wójcik, V. Osinniy, Microelectron. Eng. 85, 2434 (2008)
  • 2. S. Gieraltowska, L. Wachnicki, B.S. Witkowski, T.A. Krajewski, M. Godlewski, E. Guziewicz, Thin Solid Films 520, 4694 (2012)
  • 3. M. Godlewski, E. Guziewicz, G. Łuka, T. Krajewski, M. Łukasiewicz, Ł. Wachnicki, A. Wachnicka, K. Kopalko, A. Sarem, B. Dalati, Thin Solid Films 518, 1145 (2009)
  • 4. G. Luka, L. Wachnicki, B.S. Witkowski, T.A. Krajewski, R. Jakiela, E. Guziewicz, M. Godlewski, Mater. Sci. Eng. B 176, 237 (2011)
  • 5. U. Ozgur, D. Hofstetter, H. Morkoç, Proc. IEEE 98, 1255 (2010)
  • 6. E. Guziewicz, M. Godlewski, T. Krajewski, Ł. Wachnicki, A. Szczepanik, K. Kopalko, A. Wójcik-Głodowska, E. Przeździecka, W. Paszkowicz, E. Łusakowska, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, J. Appl. Phys. 105, 122413 (2009)
  • 7. M. Ritala, M. Leskela, in: Handbook of Thin Films Materials, Ed. H.S. Nalwa, Academic Press, San Diego 2001, Ch. 2, p. 103
  • 8. E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, F.C. Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, G. Łuka, Appl. Phys. Lett. 94, 143501 (2009)
  • 9. P.Y. Stakhira, G.L. Pakhomov, V.V. Cherpak, D. Volynyuk, G. Luka, M. Godlewski, E. Guziewicz, Z.Yu. Hotra, Cent. Eur. J. Phys. 8, 798 (2010)
  • 10. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov, S. Dogan, V. Avrutin, S.J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005)
  • 11. W.K. Chu, J.W. Mayer, M.A. Nicolet, Backscattering Spectrometry, Academic Press, California 1978
  • 12. A.V. Kuchuk, M. Guziewicz, R. Ratajczak, M. Wzorek, V.P. Kladko, A. Piotrowska, Mater. Sci. Forum 645-648, 737 (2010)
  • 13. A. Turos, J. Gaca, M. Wojcik, L. Nowicki, R. Ratajczak, R. Groetzschel, F. Eichhorn, N. Schell, Nucl. Instrum. Methods Phys. Res. B 219-220, 618 (2004)
  • 14. R. Ratajczak, J. Gaca, M. Wójcik, A. Stonert, K. Pagowska, J. Borysiuk, A. Turos, Vacuum 83, S148 (2009)
  • 15. M. Mayer, SIMNRA User's Guide, Max Planck-Institute-fur-Plasmaphysik, Garching, Germany 1997, Report IPP 9/113
  • 16. G. Luka, P. Stakhira, V. Cherpak, D. Volynyuk, Z. Hotra, M. Godlewski, E. Guziewicz, B. Witkowski, W. Paszkowicz, A. Kostruba, J. Appl. Phys. 108, 064518 (2010)
  • 17. N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, V. Osinniy, Appl. Phys. Lett. 92, 023502 (2008)
  • 18. T.A. Krajewski, G. Luka, S. Gieraltowska, A.J. Zakrzewski, P.S. Smertenko, P. Kruszewski, L. Wachnicki, B.S. Witkowski, E. Lusakowska, R. Jakiela, M. Godlewski, E. Guziewicz, Appl. Phys. Lett. 98, 263502 (2011)
  • 19. E. Guziewicz, M. Godlewski, L. Wachnicki, T.A. Krajewski, G. Luka, S. Gieraltowska, R. Jakiela, A. Stonert, W. Lisowski, M. Krawczyk, J.W. Sobczak, A. Jablonski, Semicond. Sci. Technol. 27, 074011 (2012)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n530kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.