Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation

• Authors: V. Vinciūnaitė , A. Grigonis , A. Medvid , R. Zabels
• Languages of publication: EN

Abstracts

EN

Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene-hydrogen gas mixtures. The films were irradiated with a nanosecond Nd:YAG laser working at the first harmonics (λ_1=1064 nm), the fourth harmonics (λ_4=266 nm) or with a Nd:YVO_4 laser working at the third harmonic (λ_3=355 nm). The films were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength λ_1=1064 nm leads to graphitization and formation of the silicon carbide, because of the silicon substrate decomposition. The samples were strongly modified after the irradiation by λ_3=355 nm - the thickness of the films decreased, and silicon carbide was formed. It was observed that nano-structured materials (e.g. carbon nano-onions, nc-diamond) were formed after the irradiation by λ_4=266 nm.

Keywords

EN

79.20.Eb; 81.05.uj; 81.15.Jj; 82.80.Gk

Discipline

• 81.15.Jj: Ion and electron beam-assisted deposition; ion plating(see also 52.77.Dq Plasma-based ion implantation and deposition in physics of plasmas)
• 81.05.uj: Diamond/nanocarbon composites
• 82.80.Gk: Analytical methods involving vibrational spectroscopy
• 79.20.Eb: Laser ablation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 874-876

Dates

published

2013-05

Contributors

author

V. Vinciūnaitė

• Kaunas University of Technology, Studentų St. 50, LT-51368 Kaunas, Lithuania

author

A. Grigonis

• Kaunas University of Technology, Studentų St. 50, LT-51368 Kaunas, Lithuania

author

A. Medvid

• Riga Technical University, 14 Azenes Str., LV-1068 Riga, Latvia

author

R. Zabels

• Institute of Solid State Physics, University of Latvia, 8 Kengaraga St., LV-1063 Riga, Latvia

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Identifiers

DOI

10.12693/APhysPolA.123.874