Nuclear and Optical Analyses of MOS Devices

• Authors: W. Rzodkiewicz , M. Kulik , A. Panas , A. Kobzev
• Languages of publication: EN

Abstracts

EN

The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.

Keywords

EN

82.80.Yc; 78.20.Ci; 07.60.Fs; 85.30.-z

Discipline

• 85.30.-z: Semiconductor devices(for photodiodes, phototransistors, and photoresistors, see 85.60.Dw; for laser diodes, see 42.55.Px; for semiconductor-based solar cells, see 88.40.-j; for applications of dielectric films in silicon electronics, see 77.55.df)
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 07.60.Fs: Polarimeters and ellipsometers
• 82.80.Yc: Rutherford backscattering (RBS), and other methods of chemical analysis

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 851-853

Dates

published

2013-05

Contributors

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Kulik

• Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

A. Panas

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Kobzev

• Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.123.851