PL EN


Preferences help
enabled [disable] Abstract
Number of results
2013 | 123 | 5 | 851-853
Article title

Nuclear and Optical Analyses of MOS Devices

Content
Title variants
Languages of publication
EN
Abstracts
EN
The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
Keywords
Contributors
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna, Russia
References
  • 1. C.-C. Hong, J.-G. Hwu, Appl. Phys. Lett. 79, 3797 (2001)
  • 2. H.M. Przewłocki, A. Kudla, D. Brzezinska, H.Z. Massoud, Microelectron. Eng. 72, 165 (2004)
  • 3. A. Kudla, H.M. Przewłocki, L. Borowicz, D. Brzezinska, W. Rzodkiewicz, Thin Solid Films 450, 203 (2004)
  • 4. H.M. Przewłocki, A. Kudla, K. Piskorski, D. Brzezinska, Thin Solid Films 516, 4184 (2008)
  • 5. I.J.R. Baumvol, F.C. Stedile, C. Radtke, F.L. Freire Jr, E. Gusev, M.L. Green, D. Brasen, Nucl. Instrum. Methods Phys. Res. B 136, 204 (1998)
  • 6. C. Jeynes, R.P. Webb, A. Lohstroh, Rev. Acceler. Sci. Technol. 4, 41 (2011)
  • 7. N. Herbots, J.M. Shaw, Q.B. Hurst, M.P. Grams, T.J. Culbertson, D.J. Smith, V. Atluri, P. Zimmerman, K.T. Queeney, Mater. Sci. Eng. B 87, 303 (2001)
  • 8. R.D. Verda, J.R. Tesmer, M. Nastasi, R.W. Bower, Nucl. Instrum. Methods Phys. Res. B 187, 383 (2002)
  • 9. R.D. Verda, J.R. Tesmer, M. Nastasi, R.W. Bower, Nucl. Instrum. Methods Phys. Res. B 190, 419 (2002)
  • 10. M. Mayer, SIMNRA User's Guide, Max-Planck-Institut für Plasmaphysik, Garching, Germany, http://www2.if.usp.br/~lamfi/guia-simnra.pdf (2012)
  • 11. J. Jeong, Y. Hong, J.K. Jeong, J.-S. Park, Y.-G. Mo, J. Displ. Technol. 5, 495 (2009)
  • 12. K. Hozawa, H. Miyazaki, J. Yugami, in: Electron Device Meeting, IEDM'02 Int., IEEE, Piscataway (NJ) 2002, p. 737
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n517kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.