Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties

• Authors: V. Luhin , I. Zharsky , P. Zhukowski
• Languages of publication: EN

Abstracts

EN

In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of In_2O_3 films formation with high selectivity and sensitivity to NO_2, and NH_3 are established.

Keywords

EN

81.15.Cd; 73.50.-h

Discipline

• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 81.15.Cd: Deposition by sputtering

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 837-839

Dates

published

2013-05

Contributors

author

V. Luhin

• Belarusian State University of Technology, Sverdlova 13a, 220050 Minsk, Republic of Belarus

author

I. Zharsky

• Belarusian State University of Technology, Sverdlova 13a, 220050 Minsk, Republic of Belarus

author

P. Zhukowski

• Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland

References

• 1. V. Luhin, V. Zarapin, I.M. Zharsky, P. Zukovski, M. Kolasik, C. Kozak, Elektronika - Konstrukcje Technologie Zastosowania 6, 262 (2008) (in Polish)
• 2. V. Luhin, I.M. Zharsky, P. Zukovski, J. Partyka, Przegląd Elektrotechniczny 84, 174 (2008) (in Polish)

Identifiers

DOI

10.12693/APhysPolA.123.837