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Abstracts
In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of In_2O_3 films formation with high selectivity and sensitivity to NO_2, and NH_3 are established.
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Journal
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Volume
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Pages
837-839
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Dates
published
2013-05
Contributors
author
- Belarusian State University of Technology, Sverdlova 13a, 220050 Minsk, Republic of Belarus
author
- Belarusian State University of Technology, Sverdlova 13a, 220050 Minsk, Republic of Belarus
author
- Lublin University of Technology, Nadbystrzycka 38a, 20-618 Lublin, Poland
References
- 1. V. Luhin, V. Zarapin, I.M. Zharsky, P. Zukovski, M. Kolasik, C. Kozak, Elektronika - Konstrukcje Technologie Zastosowania 6, 262 (2008) (in Polish)
- 2. V. Luhin, I.M. Zharsky, P. Zukovski, J. Partyka, PrzeglÄ…d Elektrotechniczny 84, 174 (2008) (in Polish)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n513kz