Analysis of Crystal Lattice Deformation by Ion Channeling

• Authors: P. Jóźwik , N. Sathish , L. Nowicki , J. Jagielski , A. Turos , L. Kovarik , B. Arey , S. Shutthanandan , W. Jiang , J. Dyczewski , A. Barcz
• Languages of publication: EN

Abstracts

EN

A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded SrTiO_3 samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.

Keywords

EN

61.85.+p; 68.55.Ln; 02.70.Uu; 68.37.Og

Discipline

• 68.37.Og: High-resolution transmission electron microscopy (HRTEM)
• 68.55.Ln: Defects and impurities: doping, implantation, distribution, concentration, etc.(for diffusion of impurities, see 66.30.J-)
• 02.70.Uu: Applications of Monte Carlo methods(see also 02.50.Ng in probability theory, stochastic processes, and statistics, and 05.10.Ln in statistical physics)
• 61.85.+p: Channeling phenomena (blocking, energy loss, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 828-830

Dates

published

2013-05

Contributors

author

P. Jóźwik

• National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock/Świerk, Poland
• Institute for Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

N. Sathish

• National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock/Świerk, Poland
• Institute for Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

L. Nowicki

• National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock/Świerk, Poland

author

J. Jagielski

• National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock/Świerk, Poland
• Institute for Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

A. Turos

• National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock/Świerk, Poland
• Institute for Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

L. Kovarik

• Pacific Northwest National Laboratory, Richland, WA 99352, USA

author

B. Arey

• Pacific Northwest National Laboratory, Richland, WA 99352, USA

author

S. Shutthanandan

• Pacific Northwest National Laboratory, Richland, WA 99352, USA

author

W. Jiang

• Pacific Northwest National Laboratory, Richland, WA 99352, USA

author

J. Dyczewski

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Barcz

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warszawa, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.123.828