Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers

• Authors: F. Komarov , L. Vlasukova , O. Milchanin , M. Greben , A. Komarov , A. Mudryi , W. Wesch , E. Wendler , J. Zuk , M. Kulik , G. Ismailova
• Languages of publication: EN

Abstracts

EN

Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.

Keywords

EN

61.80.-x; 61.72.Ff; 63.20.-e; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 63.20.-e: Phonons in crystal lattices(for phonons in superconductors, see 74.25.Kc; see also 43.35.Gk Phonons in crystal lattice, quantum acoustics—in Acoustics Appendix)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 809-812

Dates

published

2013-05

Contributors

author

F. Komarov

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

L. Vlasukova

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

O. Milchanin

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

M. Greben

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

A. Komarov

• Belarusian State University, Nezavisimosti ave. 4, 220030 Minsk, Belarus

author

A. Mudryi

• Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk, Belarus

author

W. Wesch

• Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

author

E. Wendler

• Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany

author

J. Zuk

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

M. Kulik

• Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland

author

G. Ismailova

• Al-Farabi Kazakh National University, 71 al-Farabi ave., 050040 Almaty, Kazakhstan

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Identifiers

DOI

10.12693/APhysPolA.123.809