Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions

• Authors: A. Komarov , O. Velichko , G. Zayats , F. Komarov , S. Miskiewicz , A. Mironov , Yu. Makarevich
• Languages of publication: EN

Abstracts

EN

Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.

Keywords

EN

66.30.J-   07.05.Tp   07.05.Bx  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 5
• Pages: 804-808

Dates

published

2013-05

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Identifiers

DOI

10.12693/APhysPolA.123.804