Electrical Resistivity of the Monoatomic Metallic Layer

• Authors: A. Paja , A. Działo
• Languages of publication: EN

Abstracts

EN

We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.

Keywords

EN

73.50.-h; 73.50.Bk; 73.63.-b; 73.63.Hs

Discipline

• 73.63.-b: Electronic transport in nanoscale materials and structures(see also 73.23.-b Electronic transport in mesoscopic systems)
• 73.50.Bk: General theory, scattering mechanisms
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)
• 73.63.Hs: Quantum wells

• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 4
• Pages: 770-772

Dates

published

2013-04

received

2012-12-31

(unknown)

2013-03-08

Contributors

author

A. Paja

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland

author

A. Działo

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland

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Identifiers

DOI

10.12693/APhysPolA.123.770