Trapping Center Parameters in N-Implanted Tl_2Ga_2S_3Se Single Crystals by Thermally Stimulated Currents Measurements

• Authors: T. Yildirim , N. Gasanly , R. Turan
• Languages of publication: EN

Abstracts

EN

As-grown Tl_2Ga_2S_3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 × 10^{16} ions/cm^2. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as 3.9 × 10^{-20} cm^2. Also the concentration of the traps was estimated to be 8.0 × 10^{11} cm^{-3}.

Keywords

EN

71.55.-i; 72.20.Jv; 72.80.Jc

Discipline

• 72.80.Jc: Other crystalline inorganic semiconductors
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 4
• Pages: 766-769

Dates

published

2013-04

received

2012-11-09

Contributors

author

T. Yildirim

• Department of Physics, Nevsehir University, 50300 Nevsehir, Turkey

author

N. Gasanly

• Department of Physics, Middle East Technical University, 06800 Ankara, Turkey

author

R. Turan

• Department of Physics, Middle East Technical University, 06800 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.123.766