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2013 | 123 | 4 | 766-769
Article title

Trapping Center Parameters in N-Implanted Tl_2Ga_2S_3Se Single Crystals by Thermally Stimulated Currents Measurements

Content
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Languages of publication
EN
Abstracts
EN
As-grown Tl_2Ga_2S_3Se crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of 1 × 10^{16} ions/cm^2. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as 3.9 × 10^{-20} cm^2. Also the concentration of the traps was estimated to be 8.0 × 10^{11} cm^{-3}.
Keywords
EN
Year
Volume
123
Issue
4
Pages
766-769
Physical description
Dates
published
2013-04
received
2012-11-09
References
  • 1. D. Muller, H. Hahn, Z. Anorg. Allg. Chem. 438, 258 (1978)
  • 2. K.A. Yee, A. Albright, J. Am. Chem. Soc. 113, 6474 (1991)
  • 3. M. Hanias, A. Anagnostopoulos, K. Kambas, J. Spiridelis, Mater. Res. Bull. 27, 25 (1992)
  • 4. I.M. Ashraf, M.M. Abdel-Rahman, A.M. Badr, J. Phys. D, Appl. Phys. 36, 109 (2003)
  • 5. A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullaeva, E. Kerimova, H. Uchiki, S. Iida, J. Phys. Chem. Solids 64, 1713 (2003)
  • 6. M.M. El Nahass, M.M. Sallam, S.A. Rahman, E.M. Ibrahim, Solid State Sci. 8, 488 (2006)
  • 7. V. Grivickas, V. Bikbajevas, P. Grivickas, Phys. Status Solidi B 243, R31 (2006)
  • 8. K.R. Allakhverdiev, Solid State Commun. 111, 253 (1999)
  • 9. M. Isik, N.M. Gasanly, Phys. B 407, 2229 (2012)
  • 10. T. Yildirim, N.M. Gasanly, Solid State Sci. 11, 1562 (2009)
  • 11. T. Yildirim, H.A. Nasser, N.M. Gasanly, Int. J. Mod. Phys. B 24, 2149 (2010)
  • 12. R. Chen, S.W.S. Mckeever, Theory of Thermoluminescence and Related Phenomena, Word Scientific, Singapore 1997
  • 13. G. Kitis, R. Chen, V. Pagonis, Phys. Status. Solidi A 205, 1181 (2008)
  • 14. E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino, J. Phys. D, Appl. Phys. 31, L93 (1998)
  • 15. V.M. Skorikov, V.I. Chmyrev, V.V. Zuev, E.V. Larina, Inorg. Mater. 38, 751 (2002)
  • 16. Z.Q. Fang, B. Claflin, D.C. Look, J. Appl. Phys. 103, 073714 (2008)
  • 17. J.M. Wrobel, A. Gubanski, E. Placzek-Popko, J. Rezmer, P. Becla, J. Appl. Phys. 103, 063720 (2008)
  • 18. J. Schafferhans, A. Baumann, C. Deibel, V. Dyakonov, Appl. Phys. Lett. 93, 093303 (2008)
  • 19. R. Schmechel, H. von Seggern, Phys. Status Solidi A 201, 1215 (2004)
  • 20. R. Chen, Y. Kirsh, Analysis of Thermally Stimulated Processes, Pergamon Press, Oxford 1981
  • 21. N.S. Yuksek, N.M. Gasanly, H. Ozkan, Semicond. Sci. Technol. 18, 834 (2003)
  • 22. A.F. Qasrawi, N.M. Gasanly, Cryst. Res. Tech. 41, 174 (2006)
  • 23. C. Manfredotti, R. Murri, A. Quirini, L. Vasanelli, Phys. Status Solidi A 38, 685 (1976)
  • 24. R. Bube, Photoelectronic Properties of Semiconductors, Cambridge University Press, Cambridge 1992
  • 25. T. Pisarkiewicz, Opto-Electron. Rev. 12, 33 (2004)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n424kz
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