Influences of Annealing Temperature on the Optical and Structural Properties of Manganese Oxide Thin Film by Zn Doping from Sol-Gel Technique

• Authors: S. Pishdadian , A. Shariati Ghaleno
• Languages of publication: EN

Abstracts

EN

Thin films of MnO_2, Mn_2O_3, and Mn_3O_4 have been grown from single precursor solution by varying the post-annealing condition on the glass and corning substrate using a sol-gel technique. By annealing in air and at temperature between 600 and 800°C, cubic Mn_2O_3 films could be formed. The films were thermally annealed at different temperatures between 300 and 800C to create different crystalline structure. Even under the air-annealing condition, Zn doping results in a structural transformation from cubic Zn_{x}Mn_{2-x}O_3 to tetragonal Zn_{x}Mn_{3-x}O_4. X-ray diffraction, atomic force microscopy, and UV-visible spectra were used to characterize the effect of thermal annealing on the optical and structural properties of a Zn doped manganese oxide thin film. Optical properties of the Mn_2O_3 and Mn_3O_4 films have been investigated by pointwise unconditioned minimization approach.

Keywords

EN

78.66.-w; 81.10.-h; 68.55.Jk

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 81.10.-h: Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation(see also 61.50.Lt Crystal binding, cohesive energy)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 4
• Pages: 741-745

Dates

published

2013-04

received

2012-02-26

Contributors

author

S. Pishdadian

• Department of Physics, Shahrood Branch, Islamic Azad University, Shahrood, Iran

author

A. Shariati Ghaleno

• Department of Physics, Shahrood Branch, Islamic Azad University, Shahrood, Iran

References

• 1. P. Fau, J.P. Bonino, A. Rousset, Appl. Sci. 78, 203 (1994)
• 2. R.M. Vaalletta, W.A. Pliskin, J. Electrochem. Soc. 114, 944 (1967)
• 3. T. Seike, J. Nagai, Sol. Energy Mater. 22, 107 (1991)
• 4. H. Yang, H. al-Brithen, A.R. Smith, J.A. Borchers, R.L. Cappelletti, M.D. Vaudin, Appl. Phys. Lett. 78, 3860 (2001)
• 5. O. Nilsen, H. Fjellvå g, A. Kjekshus, Thin Solid Films 444, 44 (2003)
• 6. S.A. Chambers, Y. Liang, Surf. Sci. 123, 420 (1999)
• 7. L.W. Guo. H. Makino, H.J. Ko, Y.F. Chen, T. Hanada, D.L. Peng, K. Inaba, T. Yao, J. Cryst. Growth 955, 227 (2001)
• 8. M. Chigane, M. Ishikawa, J. Electrochem. Soc. 148, D96 (2001)
• 9. A.K.M. Farid Ul Islam, R. Islam, K.A. Khan, Renew. En. 30, 2289 (2005)
• 10. R.M. Valletta, J. Makris, W.A. Pliskin, Proc. Electron. Compon. Conf. 16, 31 (1966)
• 11. K. Wang Joo Kim, Young. Ran Park, J. Crystal Growth 270, 162 (2004)
• 12. Y.J. Park, J.G. Kim, H.T. Chung, H.G. Kim, Solid State Ionics 130, 203 (2000)
• 13. I. Chambouleyron, J.M. Martinez, A.C. Moretti, Appl. Opt. 36, 1 (1997)
• 14. JCPDS, International Centre for Diffraction Data 41, 1442 (1997)
• 15. C.O. Paiva-Santos, R.F.C. Marques, M. Jafelicci, L.C. Varandaa, Powder Diffraction 17, 149 (2002)
• 16. M.F. Al-Kuhaili, J. Vac. Sci. Technol. 24, 1746 (2006)

Identifiers

DOI

10.12693/APhysPolA.123.741