Correlation Between Refractive Index and Electronegativity Difference for A^{N}B^{8-N} Type Binary Semiconductors

• Authors: A. Bahadur , M. Mishra
• Languages of publication: EN

Abstracts

EN

A simple correlation between the high-frequency refractive index and electronegativity difference has been established for large number of A^{N}B^{8-N} type binary semiconductors. The proposed relation has been applied satisfactorily to evaluate the refractive index of binary semiconductors belonging to groups I-VII, II-VI, III-V and IV-VI. The estimated values of refractive index from present relation are utilized to calculate the electronic polarizability of compounds by applying the Lorentz-Lorentz formula. Our calculated values of refractive index and electronic polarizability are in good agreement with the values evaluated by earlier researchers.

Keywords

EN

78.20.Ci; 71.55.Eq

Discipline

• 71.55.Eq: III-V semiconductors
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 4
• Pages: 737-740

Dates

published

2013-04

received

2012-01-10

(unknown)

2012-12-08

Contributors

author

A. Bahadur

• Department of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur-228 118 (U.P.), India

author

M. Mishra

• Department of Physics, Birla Institute of Technology and Science, Pilani-333 031 (Rajasthan), India

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Identifiers

DOI

10.12693/APhysPolA.123.737