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2013 | 123 | 4 | 737-740
Article title

Correlation Between Refractive Index and Electronegativity Difference for A^{N}B^{8-N} Type Binary Semiconductors

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EN
Abstracts
EN
A simple correlation between the high-frequency refractive index and electronegativity difference has been established for large number of A^{N}B^{8-N} type binary semiconductors. The proposed relation has been applied satisfactorily to evaluate the refractive index of binary semiconductors belonging to groups I-VII, II-VI, III-V and IV-VI. The estimated values of refractive index from present relation are utilized to calculate the electronic polarizability of compounds by applying the Lorentz-Lorentz formula. Our calculated values of refractive index and electronic polarizability are in good agreement with the values evaluated by earlier researchers.
Keywords
EN
Publisher

Year
Volume
123
Issue
4
Pages
737-740
Physical description
Dates
published
2013-04
received
2012-01-10
(unknown)
2012-12-08
Contributors
author
  • Department of Physics, Kamla Nehru Institute of Physical and Social Sciences, Sultanpur-228 118 (U.P.), India
author
  • Department of Physics, Birla Institute of Technology and Science, Pilani-333 031 (Rajasthan), India
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n418kz
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