Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods

• Authors: M. Almokhtar , S. Emura , H. Tambo , S. Hasegawa , H. Asahi
• Languages of publication: EN

Abstracts

EN

GaN/AlGaN single quantum disks on GaN nanorods were grown on Si (001) substrate with native SiO_2 layer by a plasma-assisted molecular-beam epitaxy under nitrogen-rich conditions. The transmission electron microscopy observations show single GaN nanorods images with an average thickness of 4 nm for the GaN single quantum disk and nanorod diameter of 15 nm. The observed photoluminescence spectra at 8 K show a peak at 3.475 eV, attributed to an exciton recombination in GaN. A strong peak was observed at 3.542 eV. This peak is attributed to the quantum confinement of excitons in the GaN quantum disks.

Keywords

EN

61.46.Km; 78.67.De; 81.07.Vb

Discipline

• 81.07.Vb: Quantum wires
• 61.46.Km: Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
• 78.67.De: Quantum wells

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 2
• Pages: 473-475

Dates

published

2013-02

Contributors

author

M. Almokhtar

• Physics Department, Assiut University, Assiut 71516, Egypt
• The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

author

S. Emura

• The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

author

H. Tambo

• The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

author

S. Hasegawa

• The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

author

H. Asahi

• The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan

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Identifiers

DOI

10.12693/APhysPolA.123.473