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2013 | 123 | 2 | 473-475
Article title

Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods

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EN
Abstracts
EN
GaN/AlGaN single quantum disks on GaN nanorods were grown on Si (001) substrate with native SiO_2 layer by a plasma-assisted molecular-beam epitaxy under nitrogen-rich conditions. The transmission electron microscopy observations show single GaN nanorods images with an average thickness of 4 nm for the GaN single quantum disk and nanorod diameter of 15 nm. The observed photoluminescence spectra at 8 K show a peak at 3.475 eV, attributed to an exciton recombination in GaN. A strong peak was observed at 3.542 eV. This peak is attributed to the quantum confinement of excitons in the GaN quantum disks.
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EN
Contributors
author
  • Physics Department, Assiut University, Assiut 71516, Egypt
  • The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
author
  • The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
author
  • The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
author
  • The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
author
  • The Institute of Scientific and Industrial Research, Osaka University, 8-1Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2104kz
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