Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

• Authors: A. Havare , S. Okur , N. Yagmurcukardes , M. Can , H. Aydin , M. Seker , S. Demic
• Languages of publication: EN

Abstracts

EN

In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.

Keywords

EN

73.20.Hb; 73.20.Mf; 73.21.-b; 73.22.-f; 73.25.+i; 73.40.Ei; 73.40.Jn; 73.40.Ns

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 73.22.-f: Electronic structure of nanoscale materials and related systems
• 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
• 73.40.Ns: Metal-nonmetal contacts
• 73.40.Jn: Metal-to-metal contacts
• 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)
• 73.40.Ei: Rectification
• 73.25.+i: Surface conductivity and carrier phenomena

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 2
• Pages: 456-458

Dates

published

2013-02

Contributors

author

A. Havare

• Toros University, Faculty of Engineering, Mersin, Turkey

author

S. Okur

• Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey

author

N. Yagmurcukardes

• Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey

author

M. Can

• Institute of Solar Energy, Ege University, Izmir, Turkey

author

H. Aydin

• Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey

author

M. Seker

• Ondokuz Mays University, Science and Arts Faculty, Department of Physics, Samsun, Turkey

author

S. Demic

• Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey

References

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Identifiers

DOI

10.12693/APhysPolA.123.456