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Abstracts
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
Discipline
- 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
- 73.22.-f: Electronic structure of nanoscale materials and related systems
- 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
- 73.40.Ns: Metal-nonmetal contacts
- 73.40.Jn: Metal-to-metal contacts
- 73.21.-b: Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems(for electron states in nanoscale materials, see 73.22.-f)
- 73.40.Ei: Rectification
- 73.25.+i: Surface conductivity and carrier phenomena
Journal
Year
Volume
Issue
Pages
456-458
Physical description
Dates
published
2013-02
Contributors
author
- Toros University, Faculty of Engineering, Mersin, Turkey
author
- Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey
author
- Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey
author
- Institute of Solar Energy, Ege University, Izmir, Turkey
author
- Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey
author
- Ondokuz Mays University, Science and Arts Faculty, Department of Physics, Samsun, Turkey
author
- Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2098kz