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2013 | 123 | 2 | 456-458
Article title

Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs

Content
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EN
Abstracts
EN
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current-voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy.
Keywords
Contributors
author
  • Toros University, Faculty of Engineering, Mersin, Turkey
author
  • Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey
  • Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey
author
  • Institute of Solar Energy, Ege University, Izmir, Turkey
author
  • Izmir Institute of Technology, Faculty of Science, Material Science and Engineering, Izmir, Turkey
author
  • Ondokuz Mays University, Science and Arts Faculty, Department of Physics, Samsun, Turkey
author
  • Izmir Katip Celebi University, Material Science and Engineering, Çiğli, İzmir, Turkey
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2098kz
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