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2013 | 123 | 2 | 415-417
Article title

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

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EN
Abstracts
EN
In this paper, for the first time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as very low insertion loss, zero chirp, high extinction ratio, and large Stark shift and better figures of merit as compared with multiquantum well and intra-step quantum well structures. Furthermore, traveling wave electroabsorption modulator with double steps III/V mesa structure results in a wider bandwidth as compared with one-step III/V mesa and mushroom structures. For the modulator with double steps III/V mesa structure with a 200 μm length, the 3 dB bandwidths are obtained as 132 and 52 GHz for 25 and 40 Ω characteristic impedances, respectively.
Keywords
EN
Year
Volume
123
Issue
2
Pages
415-417
Physical description
Dates
published
2013-02
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2086kz
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