PL EN


Preferences help
enabled [disable] Abstract
Number of results
2013 | 123 | 2 | 326-329
Article title

Effects of Substrate Temperature on Structural Properties of Tin Oxide Films Produced by Plasma Oxidation after Thermal Evaporation

Content
Title variants
Languages of publication
EN
Abstracts
EN
In this study, tin film was thermally evaporated onto a stainless steel substrate in an argon atmosphere. The tin films were then subjected to a DC plasma oxidation process using an oxygen/argon gas mixture. Three different substrate temperatures (100°C, 150°C, and 200°C) and three different oxygen partial pressures (12.5%, 25%, and 50%) were used to investigate the physical and microstructural properties of the films. The surface properties were studied by scanning electron microscopy, X-ray diffraction, atomic force microscopy and a four-point probe electrical resistivity measurement. The grain size and texture coefficient of the tin oxide films were calculated. Both SnO and SnO_2 films with grain sizes of 13-43 nm were produced, depending on the oxygen partial pressure. SnO films have flower- and flake-like nanostructures, and SnO_2 films have grape-like structures with nanograins. The resistivity values for the SnO_2 phase were found to be as low as 10^{-5} Ω cm and were observed to decrease with increasing substrate temperature.
Keywords
EN
Contributors
author
  • Sakarya University, Dept. of Metallurgical & Materials Engineering, 54187, Sakarya, Turkey
author
  • Sakarya University, Dept. of Metallurgical & Materials Engineering, 54187, Sakarya, Turkey
author
  • Sakarya University, Dept. of Metallurgical & Materials Engineering, 54187, Sakarya, Turkey
author
  • Sakarya University, Dept. of Metallurgical & Materials Engineering, 54187, Sakarya, Turkey
References
  • [1] Q. Liu, Z. Liu, L. Feng, Comput. Mater. Sci. 47, 1016 (2010)
  • [2] J.H. Shin, J.Y. Song, Y.H. Kim, H.M. Park, Mater. Lett. 64, 1120 (2010)
  • [3] R.Y. Korotkov, P. Ricou, A.J.E. Farran, Thin Solid Films 502, 79 (2006)
  • [4] M. Alaf, M.O. Guler, D. Gultekin, M. Uysal, A. Alp, H. Akbulut, Vacuum 83, 292 (2009)
  • [5] H. Uchiyama, H. Imai, Cryst. Growth Des. 7, 841 (2007)
  • [6] S. Wang, S. Xie, H. Li, S. Yan, K. Fan, M. Qiao, Chem. Commun., 507 (2005)
  • [7] Y. Pei, S. Wang, Q. Zhou, S.-H. Xie, M.-H. Qiao, Z.-Y. Jiang, K.-N. Fan, Chin. J. Chem. 25, 1385 (2007)
  • [8] H. Uchiyama, H. Imai, Langmuir 24, 9038 (2008)
  • [9] Z. Jia, L. Zhu, G. Liao, Y. Yu, Y. Tang, Solid State Commun. 132, 79 (2004)
  • [10] A. Yadav, E.U. Masumdar, A.V. Moholkar, M. Neumann-Spallart, K.Y. Rajpure, C.H. Bhosale, J. Alloys Comp. 488, 350 (2009)
  • [11] S.J. Ikhmayies, R.N.A. Bitar, Mater. Sci. Semicond. Proc. 12, 122 (2009)
  • [12] V. Senthilkumar, P. Vickraman, Curr. Appl. Phys. 10, 880 (2010)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2057kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.