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2013 | 123 | 2 | 180-182
Article title

Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking

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EN
Abstracts
EN
Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.
Keywords
Contributors
author
  • KACST Technology Innovation Center RFTONICS, King Saud University, Riyadh, Saudi Arabia
  • COMSATS Institute of Information Technology, Islamabad, Pakistan
author
  • KACST Technology Innovation Center RFTONICS, King Saud University, Riyadh, Saudi Arabia
author
  • University of Bristol, Bristol, United Kingdom
References
  • [1] E.K. Lau, L.J. Wong, M.C. Wu, IEEE J. Sel. Top. Quantum. Electron. 15, 618 (2009)
  • [2] M. Sorel, G. Giuliani, A. Scirè, R. Miglierina, S. Donati, P.J.R. Laybourn, IEEE J. Quantum Electron. 39, 1187 (2003)
  • [3] M.I. Memon, Bei Li, G. Mezosi, Z. Wang, M. Sorel, S. Yu, IEEE Photon. Technol. Lett. 21, 1792 (2009)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv123n2005kz
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