Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking

• Authors: M. Memon , H. Fathallah , S. Yu
• Languages of publication: EN

Abstracts

EN

Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.

Keywords

EN

42.55.Px   42.55.Sa   42.60.By   42.60.Fc   42.65.Pc  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 2
• Pages: 180-182

Dates

published

2013-02

References

• [1] E.K. Lau, L.J. Wong, M.C. Wu, IEEE J. Sel. Top. Quantum. Electron. 15, 618 (2009)
• [2] M. Sorel, G. Giuliani, A. Scirè, R. Miglierina, S. Donati, P.J.R. Laybourn, IEEE J. Quantum Electron. 39, 1187 (2003)
• [3] M.I. Memon, Bei Li, G. Mezosi, Z. Wang, M. Sorel, S. Yu, IEEE Photon. Technol. Lett. 21, 1792 (2009)

Identifiers

DOI

10.12693/APhysPolA.123.180