Preparation and Switching Behavior Characterization οf Some Quaternary Thallium Chalcogenide Compounds

• Authors: R. Al Orainy , A. Nagat
• Languages of publication: EN

Abstracts

EN

Investigation of the switching phenomenon on TlGaSSe single crystal revealed that it is typical for a memory switch. The switching process takes place with both polarities on the crystal and have symmetrical shapes. Current-voltage characteristics (CVC) of symmetrical Ag/TlGaSSe/Ag structures exhibit two distinct regions, high resistance "OFF" state and low resistance "ON" state having negative differential resistance. In addition, TlGaSSe is a quarternary semiconductor exhibiting S-type I-V characteristics. The experimental results indicate that the phenomenon in our sample is very sensitive to temperature; light intensity and sample thickness. The switching parameters were checked under the influence of different factors of the ambient condition. The present investigation is the first one on switching phenomenon of TlGaSSe.

Keywords

EN

74.25.fc

Discipline

• 74.25.fc: Electric and thermal conductivity

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 1
• Pages: 121-125

Dates

published

2013-01

received

2012-04-22

(unknown)

2012-10-20

Contributors

author

R. Al Orainy

• Physics Department, Faculty of Science for Girls, King Abdulaziz University, Jeddah, Saudi Arabia

author

A. Nagat

• Physics Department, Faculty of Science for Girls, King Abdulaziz University, Jeddah, Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.123.121