Effect of Low Temperature Annealing on Microstructural and Optical Properties of (BaTiO_3)_{0.84}(CeO_2)_{0.16} Thin Films

• Authors: Z. Dughaish
• Languages of publication: EN

Abstracts

EN

(BaTiO_3)_{0.84}(CeO_2)_{0.16} thin films were prepared by electron beam evaporation method. X-ray diffraction and scanning electron microscopy revealed the amorphous structure for the as-prepared films. The thin films were annealed at temperatures: 200, 300, 400 and 500C for 1 h in air. Small and low intensity crystalline peaks were observed at annealing temperature of 200C for 1 h. The intensity and the number of the crystalline peaks were increased with increasing annealing temperature. Nanocrystals, of dimensions in the range 60-76 nm, were obtained when the annealing was performed at 500°C. The indexed diffraction pattern of the annealed thin film revealed a monoclinic structure. A two-layer model was used to describe the experimental ellipsometric data. The Bruggeman effective medium approximation was used to describe the surface roughness layer and the Cauchy dispersion relation was used to describe the main (BaTiO_3)_{0.84}(CeO_2)_{0.16} layer. The optical constants of the thin films over 300-1100 nm spectral range were measured. The optical band gap showed gradual decrease with the annealing temperature. The accurate determination of the optical constants of the thin films is very useful and should be taken into consideration in the design of devices using optical thin films technology.

Keywords

EN

68.55.-a; 77.55.F-; 78.20.Ci; 78.66.-w; 81.15.-z; 81.40.Ef; 81.70.Fy

Discipline

• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 77.55.F-: High-permittivity capacitive films
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 81.70.Fy: Nondestructive testing: optical methods
• 81.15.-z: Methods of deposition of films and coatings; film growth and epitaxy(for structure of thin films, see 68.55.-a; see also 85.40.Sz Deposition technology in microelectronics; for epitaxial dielectric films, see 77.55.Px)
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2013
• Volume: 123
• Issue: 1
• Pages: 87-91

Dates

published

2013-01

received

2011-12-24

(unknown)

2012-10-11

Contributors

author

Z. Dughaish

• Physics Department, College of Science, Qassim University, P.O. 6644, Buraidah 51452, Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.123.87