The Effect of Power Density on Diffusion Length and Energy Gap of a-Si:H and nc-Si:H Thin Films Prepared by PECVD Technique

• Authors: R. Badran , H. Al-Amodi , S. Yaghmour , S. Shaklan , R. Bruggemann , X. Han , S. Xiong
• Languages of publication: EN

Abstracts

EN

The increase in power density of 0.3, 0.5, 0.6, and 0.7 W cm^{-2} for hydrogenated amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H) thin film samples prepared by plasma enhanced chemical vapor deposition technique causes an increase in crystalline volume fraction when the silane concentration is fixed. This increase in crystalline volume fraction is correlated to the absorption coefficient and refractive index which are determined from ellipsometric measurements. The crystallinity of samples is studied by both Raman and X-ray diffraction techniques. A mild change in the optical energy gap around an average value of 1.8 eV is noticed due to the observed change in the degree of crystallinity of the samples when power density increases. Moreover, the ambipolar diffusion length measured by the steady-state photocarrier grating technique is found to change with the increase in power density. The values of some obtained optical parameters are compared to a standard crystalline sample.

Keywords

EN

78.20.-e; 78.20.Ci; 73.61.Jc; 78.30.Ly

Discipline

• 78.30.Ly: Disordered solids
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 73.61.Jc: Amorphous semiconductors; glasses
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 3
• Pages: 576-580

Dates

published

2012-09

Contributors

author

R. Badran

• Physics Department, The Hashemite University, P.O. Box 150459, Zarqa, Jordan
• School of Natural Resources Engineering and Management, German-Jordanian University, Jordan

author

H. Al-Amodi

• Physics Department, King Abdulaziz University, P.O. Box 80203, Jeddah, Saudi Arabia

author

S. Yaghmour

• Physics Department, King Abdulaziz University, P.O. Box 80203, Jeddah, Saudi Arabia

author

S. Shaklan

• Physics Department, King Abdulaziz University, P.O. Box 80203, Jeddah, Saudi Arabia

author

R. Bruggemann

• Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany

author

X. Han

• Institute of Optoelectronics, Nankai University, Tianjin, 300071, China

author

S. Xiong

• Institute of Optoelectronics, Nankai University, Tianjin, 300071, China

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Identifiers

DOI

10.12693/APhysPolA.122.576