Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2012 | 122 | 3 | 572-575

Article title

Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

Content

Title variants

Languages of publication

EN

Abstracts

EN
High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously.

Keywords

Contributors

author
  • Institute of Photonics and Electronics, Academy of Sciences, Prague, Czech Republic
  • Institute of Photonics and Electronics, Academy of Sciences, Prague, Czech Republic
  • Faculty of Nuclear Sciences, Czech Technical University, Prague, Czech Republic
author
  • Institute of Photonics and Electronics, Academy of Sciences, Prague, Czech Republic

References

  • [1] C. Christofides, A. Mandelis, J. Appl. Phys. 68, 1 (1990)
  • [2] M. Block, in: 9th Europ. Conf. on Nondestructive Testing (ECNDT) Proc., Berlin, 2006, p. Tu.2.6.1; http://www.ndt.net/article/ecndt2006/doc/ Tu.2.6.1.pdf
  • [3] M.C. Steele, B.A. Maclver, Appl. Phys. Lett. 28, 687 (1976)
  • [4] K. Ito, Surface Sci. 86, 345 (1979)
  • [5] P.F. Ruths, S. Ashok, S.J. Fonash, J.M. Ruths, IEEE Trans. Electron Dev. 28, 1003 (1981)
  • [6] M. Yousuf, B. Kuliyev, B. Lalevic, T.L. Poteat, Solid-State Electron. 25, 753 (1982)
  • [7] D.E. Aspenes, A. Heller, J. Vac. Sci. Technol. B 1 3, 602 (1983)
  • [8] L.M. Lechuga, A. Calle, D. Golmayo, P. Tejedor, F. Briones, Sens. Actuat. B 4, 515 (1991)
  • [9] H.I. Chen, Y.I Chou, C.Y. Chu, Sensors Actuat. B 85, 10 (2002)
  • [10] K.W. Lin, H.I. Chen, H.M. Chuang, C.Y. Chen, C.T. Lu, C.C. Cheng, W.C. Liu, IEEE Sens. J. 4, 72 (2004)
  • [11] B.S. Kang, F. Ren, B.P. Gila, C.R. Abernathy, S.J. Pearton, Appl. Phys. Lett. 84, 1123 (2004)
  • [12] Y.I. Chou, C.M. Chen, W.C. Liu, H.I. Chen, IEEE Electron Dev. Lett. 26, 62 (2005)
  • [13] J.R. Huang, W.C. Hsu, H.I. Chen, W.C. Liu, Sens. Actuat. B 123, 1040 (2007)
  • [14] S.N. Das, A.K. Pal, J. Phys. D, Appl. Phys. 40, 7291 (2007)
  • [15] K. Skucha, Z. Fan, K. Jeon, A. Javey, B. Boser, Sens. Actuators B 145, 232 (2010)
  • [16] J.H. Song, W. Lu, J.S. Flynn, G.R. Brandes, Solid State Electron. 49, 1330 (2005)
  • [17] C. Tengstedt, W. Osikowicz, W.R. Salaneck, I.D. Parker, C.H. Hsu, M. Fahlman, Appl. Phys. Lett. 88, 053502 (2006)
  • [18] K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, A. Fojtik, IEEE Trans. Nanotechnol. 9, 355 (2010)
  • [19] K. Zdansky, R. Yatskiv, J. Grym, O. Cernohorsky, J. Zavadil, F. Kostka, in: Proc. 2nd NANOCON Int. Conf., Olomouc (Czech Republic), 2010, Ed. R. Zboril, TANGER Ltd, Ostrava, 2010, p. 182
  • [20] K. Zdansky, Nanoscale Res. Lett. 6, 490 (2011)
  • [21] D.H. Chen, J.J. Yeh, T.C. Huang, J. Colloid. Interf. Sci. 215, 159 (1999)
  • [22] K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, J. Vanis, F. Kostka, O. Cernohorsky, A. Fojtik, J. Reboun, J. Cermak, Int. J. Mater. Res. (formerly Z. Metallkd.) 100, 1234 (2009)
  • [23] P. Gyftou, E.A. Pavlatou, N. Spyrellis, Appl. Surf. Sci. 254, 5910 (2008)
  • [24] http://environmentalchemistry.com/yogi/periodic/Pd.html
  • [25] http://environmentalchemistry.com/yogi/periodic/Pt.html
  • [26] http://www.ioffe.ru/SVA/NSM/Semicond/InP/basic.html
  • [27] http://www.ioffe.ru/SVA/NSM/Semicond/GaN/basic.html
  • [28] L.J. Brillson, H.L. Mosbacker, M.J. Hetzer, Y. Strzhemechny, D.C. Look, G. Cantwell, J. Zhang, J.J. Song, Appl. Surf. Sci. 254, 8000 (2008)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv122z3p37kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.