Analysis of Electron Mobility in Some "Problematic Materials" from Magnetoresistance Effect at High Magnetic Fields

• Authors: V. Shchennikov , A. Kar'kin , S. Ovsyannikov , N. Morozova
• Languages of publication: EN

Abstracts

EN

Using examples of some perspective electronic materials (HgSeS, Fe_3O_4, InN, and others) it is shown that magnetoresistance data at high magnetic fields allow evaluating the true values of mobility of charge carriers in spite of any "adverse factors". Additional impacts involving high pressure and irradiation with high-energy particles (neutrons, electrons, ions) produce the enhancement of magnetoresistance technique of testing and allow to go into details of the type of electron structure and scattering mechanisms of charge carriers.

Keywords

EN

72.20.My; 62.50.-p; 61.80.-x; 72.20.Jv

Discipline

• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping
• 62.50.-p: High-pressure effects in solids and liquids(for high pressure apparatus and techniques, see 07.35.+k; for high-pressure behavior of rocks and minerals, see 91.60.Gf; for pressure treatments, see 81.40.Vw in materials science; for effects of pressure on superconducting transition temperature, see 74.62.Fj)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 3
• Pages: 544-547

Dates

published

2012-09

Contributors

author

V. Shchennikov

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia

author

A. Kar'kin

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia

author

S. Ovsyannikov

• Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstr. 30, Bayreuth D-95447, Germany
• Institute for Solid State Chemistry of Russian Academy of Sciences, Urals Division, 91 Pervomayskaya Str., Yekaterinburg 620049, Russia

author

N. Morozova

• Institute of Metal Physics of Russian Academy of Sciences, Urals Division, 18 S. Kovalevskaya Str., Yekaterinburg 620990, Russia

References

• [1] V.V. Shchennikov, in: High Pressure Science and Technology, Proc. Joint XV ARAPT and EHPRG Int. Conf., Ed. W.A. Trzeciakowski, World Sci., Singapore 1996, p. 490
• [2] C.C. Kwan, J. Basinski, J.C. Woolley, Phys. Status Solidi B 48, 699 (1971)
• [3] V.V. Shchennikov, N.N. Gavaleshko, V.M. Frasunyak, V.I. Osotov, Phys. Solid State 37, 1311 (1995)
• [4] H. Mell, J. Stuke, Phys. Status Solidi 24, 183 (1967)
• [5] A.E. Kar'kin, V.V. Shchennikov, S.V. Ovsyannikov, E.P. Skipetrov, B.N. Goshchitskii, Tech. Phys. Lett. 30, 328 (2004)
• [6] S.V. Ovsyannikov, V.V. Shchennikov, A.E. Kar'kin, B.N. Goshchitskii, J. Phys., Condens. Matter 17, S3179 (2005)
• [7] A.E. Kar'kin, B.N. Goshchitskii, Phys. Particles Nuclei 37, 807 (2006)
• [8] V.V. Shchennikov, S.V. Ovsyannikov, A.E. Karkin, S. Todo, Y. Uwatoko, Solid State Commun. 149, 759 (2009)
• [9] V.V. Shchennikov, A.E. Kar'kin, N.P. Gavaleshko, V.M. Frasunyak, Phys. Solid State 42, 215 (2000)
• [10] V.V. Shchennikov, V.I. Osotov, Phs. Solid State 37, 243 (1995)
• [11] K. Seeger, Semiconductor Physics, Springer Verlag, Berlin 1984
• [12] V.V. Shchennikov, A.E. Kar'kin, N.P. Gavaleshko, V.M. Frasunyak, Phys. Solid State 39, 1528 (1997)
• [13] S.V. Ovsyannikov, V.V. Shchennikov, I.A. Komarovskii, G.V. Vorontsov, I.V. Korobeynikov, V.V. Shchennikov Jr., Proc. SPIE 7978, 79781W (2011)
• [14] V.V. Shchennikov, Phys. Solid State 35, 401 (1993)
• [15] V.V. Shchennikov, 'Magnetoresistance of mercury, cadmium and zinc chalcogenides at ultra-high pressure' (paper is deposited at VINITI No. 1016-B 89), Institute of Metal Physics, Urals Division, Academy of Sciences, USSR, Sverdlovsk 1989, p. 1
• [16] S.A. Obukhov, Preprint No. 1459, A.F. Ioffe Physico-technical Institute, Academy of Sciences of the USSR, Leningrad 1991
• [17] V.V. Shchennikov, Defect Diffus. Forum 208-209, 275 (2002)
• [18] V.V. Shchennikov, S.V. Ovsyannikov, Solid State Commun. 121, 323 (2002)
• [19] V.V. Shchennikov, S.V. Ovsyannikov, Solid State Commun. 126, 373 (2003)
• [20] V.V. Shchennikov, S.V. Ovsyannikov, JETP Lett. 77, 88 (2003)
• [21] V.V. Shchennikov, S.V. Ovsyannikov, Phys. Status Solidi B 239, 399 (2003)
• [22] A.A. Abrikosov, Fundamental of the Metal Theory, Nauka, Moscow 1987
• [23] L.H. Dmowski, K. Dybko, J. Plesiewicz, T. Suski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla, O. Ambacher, Phys. Status Solidi B 243, 1537 (2006)
• [24] T. Suski, A. Kamińska, G. Franssen, H. Teisseyre, L.H. Dmowski, J.A. Plesiewicz, H.L. Lu, W.J. Schaff, M. Kurouchi, Y. Nanishi, Phys. Status Solidi B 244, 1825 (2007)
• [25] S.V. Ovsyannikov, V.V. Shchennikov, A.E. Karkin, A. Polian, O. Briot, S. Ruffenach, B. Gil, M. Moret, Appl. Phys. Lett. 97, 032105 (2010)
• [26] S.V. Ovsyannikov, X. Wu, V.V. Shchennikov, A.E. Karkin, N. Dubrovinskaia, G. Garbarino, L. Dubrovinsky, J. Phys., Condens. Matter 22, 375402 (2010)

Identifiers

DOI

10.12693/APhysPolA.122.544