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Thin layers of Au with the thickness of several nanometers were prepared on a semi-insulating GaAs substrate. The layers' thickness was determined by ellipsometry. THz time-domain spectroscopy was applied to determine a complex index of refraction of thin Au layers. The obtained results allow for a more precise modeling of the performance of semiconductor devices at THz frequencies.
Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
References
1. W. Knap, M. Dyakonov, D. Coquillat, F. Teppe, N. Dyakonova, J. Lusakowski, K. Karpierz, M. Sakowicz, G. Valusis, D. Seliuta, I. Kasalynas, A. El Fatimy, Y. M. Meziani, T. Otsuji, J. Infrared Milli Terahertz Waves 30, 1319 (2009)
5. Landolt-Bornstein Database, 'Electronic structure and transport - 4. Optical properties of pure metals and binary alloys - 4.2 Drude parameters of pure metals', Springer Materials Database, p. 214