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2012 | 122 | 6 | 1115-1117
Article title

Parameters of an Unique Condenson State in the Structure of the rm In_4 Se_3 Crystal

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EN
Abstracts
EN
Based upon the ab initio band structure calculations results the dispersion law parameters of charge carriers of the orthorhombic In_4 Se_3 semiconductor as well as of its Sn- and Te-doped compounds were calculated. This allowed to estimate parameters of the electron condenson states in those compounds.
Keywords
Contributors
author
  • Institute of Physics, University of Rzeszów, T. Rejtana 16a, 35-310 Rzeszów, Poland
author
  • Green Ceramics Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Geumcheon-gu, Seoul 153-801, Korea
author
  • Institute of Physics and Chemistry of Solid State, Uzhgorod National University, Ukraine
author
  • Institute of Physics and Chemistry of Solid State, Uzhgorod National University, Ukraine
author
  • Institute of Physics, University of Rzeszów, T. Rejtana 16a, 35-310 Rzeszów, Poland
  • Institute of Physics and Chemistry of Solid State, Uzhgorod National University, Ukraine
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n642kz
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