THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

• Authors: D. But , N. Dyakonova , D. Coquillat , F. Teppe , W. Knap , T. Watanabe , Y. Tanimoto , S. Boubanga Tombet , T. Otsuji
• Languages of publication: EN

Abstracts

EN

Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.

Keywords

EN

07.57.Kp; 85.30.Tv; 73.43.Qt

Discipline

• 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
• 85.30.Tv: Field effect devices
• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1080-1082

Dates

published

2012-12

Contributors

author

D. But

• Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France

author

N. Dyakonova

• Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France

author

D. Coquillat

• Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France

author

F. Teppe

• Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France

author

W. Knap

• Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France

author

T. Watanabe

• Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan

author

Y. Tanimoto

• Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan

author

S. Boubanga Tombet

• Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan

author

T. Otsuji

• Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan

References

• 1. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, Appl. Phys. Lett. 99, 243504 (2011)
• 2. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, in: Int. Poster, Intern. TeraNano&GDRI Workshop Extended Abstract, Osaka, 2011
• 3. T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, T. Otsuji, in: ISDRS 2011: Intern. Semiconductor Device Research Symp. Digest, FP3-06, Univ. Maryland, MD, USA, 2011
• 4. T. Watanabe, S.B. Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, T. Otsuji, Solid-State Electron. 78, 109 (2012)
• 5. M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap, J. Appl. Phys. 110, 054512 (2011)
• 6. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.Q. Lu, R. Gaska, M.S. Shur, G. Simin, X. Hu, M.A. Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys. 91, 9346 (2002)

Identifiers

DOI

10.12693/APhysPolA.122.1080