Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Discipline
- 07.57.Kp: Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors(see also 85.60.Gz Photodetectors in electronic and magnetic devices, and 95.55.Rg Photoconductors and bolometers in astronomy)
- 85.30.Tv: Field effect devices
- 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)
Journal
Year
Volume
Issue
Pages
1080-1082
Physical description
Dates
published
2012-12
Contributors
author
- Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
- Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
- Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
- Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
- Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
author
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
author
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
author
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
References
- 1. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, Appl. Phys. Lett. 99, 243504 (2011)
- 2. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, in: Int. Poster, Intern. TeraNano&GDRI Workshop Extended Abstract, Osaka, 2011
- 3. T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, T. Otsuji, in: ISDRS 2011: Intern. Semiconductor Device Research Symp. Digest, FP3-06, Univ. Maryland, MD, USA, 2011
- 4. T. Watanabe, S.B. Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, T. Otsuji, Solid-State Electron. 78, 109 (2012)
- 5. M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap, J. Appl. Phys. 110, 054512 (2011)
- 6. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.Q. Lu, R. Gaska, M.S. Shur, G. Simin, X. Hu, M.A. Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys. 91, 9346 (2002)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n631kz