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Number of results
2012 | 122 | 6 | 1080-1082
Article title

THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

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EN
Abstracts
EN
Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Keywords
EN
Contributors
author
  • Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
  • Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
  • Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
  • Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
  • Laboratoire Charles Coulomb UMR5221, CNRS and Université Montpellier 2, 34095 Montpellier, France
author
  • Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
author
  • Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
  • Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
author
  • Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai 980-8577, Japan
References
  • 1. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, Appl. Phys. Lett. 99, 243504 (2011)
  • 2. V.V. Popov, D.V. Fateev, T. Otsuji, Y.M. Meziani, D. Coquillat, W. Knap, in: Int. Poster, Intern. TeraNano&GDRI Workshop Extended Abstract, Osaka, 2011
  • 3. T. Watanabe, S. Boubanga Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, T. Otsuji, in: ISDRS 2011: Intern. Semiconductor Device Research Symp. Digest, FP3-06, Univ. Maryland, MD, USA, 2011
  • 4. T. Watanabe, S.B. Tombet, Y. Tanimoto, Y. Wang, H. Minamide, H. Ito, D. Fateev, V. Popov, D. Coquillat, W. Knap, Y. Meziani, T. Otsuji, Solid-State Electron. 78, 109 (2012)
  • 5. M. Sakowicz, M.B. Lifshits, O.A. Klimenko, F. Schuster, D. Coquillat, F. Teppe, W. Knap, J. Appl. Phys. 110, 054512 (2011)
  • 6. W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.Q. Lu, R. Gaska, M.S. Shur, G. Simin, X. Hu, M.A. Khan, C.A. Saylor, L.C. Brunel, J. Appl. Phys. 91, 9346 (2002)
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n631kz
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