Electrical Properties of p-ZnTe/n-CdTe Photodiodes

• Authors: S. Chusnutdinow , V. Makhniy , T. Wojtowicz , G. Karczewski
• Languages of publication: EN

Abstracts

EN

Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × 10^{-3} eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.

Keywords

EN

81.15.Hi; 73.61.Ga; 85.60.Dw; 88.40.jm

Discipline

• 88.40.jm: Thin film III-V and II-VI based solar cells
• 85.60.Dw: Photodiodes; phototransistors; photoresistors
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 73.61.Ga: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1077-1079

Dates

published

2012-12

Contributors

author

S. Chusnutdinow

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Makhniy

• Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. A.L. Fahrenbruch, R.H. Bube, Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion, Academic Press, New York 1983
• 2. A. Morales-Acevedo, Solar Energy 80, 675 (2006)
• 3. N. Amin, A. Yamada, M. Konagai, Jpn. J. Appl. Phys. 41, 2834 (2002)
• 4. T.A. Gessert, W.K. Metzger, P. Dippo, S.E. Asher, R.G. Dhere, M.R. Young, Thin Solid Films 517, 2370 (2009)
• 5. I.S. Yahia, G.B. Sakr, T. Wojtowicz, G. Karczewski, Semicond. Sci. Technol. 25, 095001 (2010)
• 6. A.A.M. Farag, I.S. Yahia, T. Wojtowicz, G. Karczewski, J. Phys. D 43, 215102 (2010)
• 7. O. Madelung, Semiconductors: Data Handbook, Springer, New York 2004
• 8. S.M. Sze, Semiconductor Device, Physics and Technology, Wiley, New York 1985

Identifiers

DOI

10.12693/APhysPolA.122.1077