Ab Initio Studies of Al and Ga Adsorption on 4H-SiC{0001} Surfaces

• Authors: E. Wachowicz , M. Sznajder , J. Majewski
• Languages of publication: EN

Abstracts

EN

Changes in the atomic and electronic structure of Si- and C-terminated 4H-SiC{0001} surfaces resulting from aluminium and gallium adsorption have been studied within density functional theory framework. Al and Ga coverages ranging from a submonolayer to one monolayer were considered. Our results show that Al binds more strongly to both surfaces than Ga. The binding is stronger to the C-terminated surface for both metals. The sites occupied by Al and Ga atoms at 1 monolayer are different and it is due to a different charge transfer from metal to the substrate.

Keywords

EN

68.47.Fg   68.35.bg   68.43.Bc   68.43.Fg  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1045-1048

Dates

published

2012-12

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Identifiers

DOI

10.12693/APhysPolA.122.1045