Structure Dependent Conductivity of Ultrathin ZnO Films

• Authors: D. Snigurenko , K. Kopalko , T. Krajewski , G. Łuka , S. Gierałtowska , B. Witkowski , M. Godlewski , K. Dybko , W. Paszkowicz , E. Guziewicz
• Languages of publication: EN

Abstracts

EN

Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.

Keywords

EN

73.61.Ga; 78.66.Hf; 81.15.Gh

Discipline

• 78.66.Hf: II-VI semiconductors
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 73.61.Ga: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1042-1044

Dates

published

2012-12

Contributors

author

D. Snigurenko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Krajewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

G. Łuka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• Dept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw, Poland

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Paszkowicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. B. Park, K. Cho, S. Kim, S. Kim, Nanoscale Res. Lett. 6, 41 (2011)
• 2. C. Weichsel, O. Pagni, A.W.R. Leitch, Semicond. Sci. Technol. 20, 840 (2005)
• 3. S.J. Lim, S.J. Kwon, H. Kim, Appl. Phys. Lett. 91, 183517 (2007)
• 4. J.J. Kyeong, Semicond. Sci. Technol. 26, 034008 (2011)
• 5. E. Kasia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perygo, S. Ferrari, F.C. Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, G. Luka, Appl. Phys. Lett. 94, 143501 (2009)
• 6. E. Guziewicz, M. Godlewski, T. Krajewski, Ł. Wachnicki, A. Szczepanik, K. Kopalko, A. Wójcik-Głodowska, E. Przeździecka, W. Paszkowicz, E. Łusakowska, P. Kruszewski, N. Huby, G. Tallarida, S. Ferrari, J. Appl. Phys. 105, 122413 (2009)
• 7. I.A. Kowalik, E. Guziewicz, K. Kopalko, S. Yatsunenko, A. Wójcik-Głodowska, M. Godlewski, P. Dłużewski, E. Łusakowska, W. Paszkowicz, J. Cryst. Growth 311, 1096 (2009)

Identifiers

DOI

10.12693/APhysPolA.122.1042