Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

• Authors: V. Khomyak , M. Slyotov , I. Shtepliuk , O. Slyotov , V. Kosolovskiy
• Languages of publication: EN

Abstracts

EN

Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > E_{g}).

Keywords

EN

78.55.Et; 78.67.Bf; 81.05.Dz; 81.07.Bc

Discipline

• 78.67.Bf: Nanocrystals, nanoparticles, and nanoclusters
• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors
• 81.07.Bc: Nanocrystalline materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1039-1041

Dates

published

2012-12

Contributors

author

V. Khomyak

• Yu. Fedkovich Chernivtsi National University, 58012, Chernivtsi, Ukraine

author

M. Slyotov

• Yu. Fedkovich Chernivtsi National University, 58012, Chernivtsi, Ukraine

author

I. Shtepliuk

• Frantsevich Institute for Problems of Materials Science, NASU, 03680, Kiev-142, Ukraine

author

O. Slyotov

• Yu. Fedkovich Chernivtsi National University, 58012, Chernivtsi, Ukraine

author

V. Kosolovskiy

• Yu. Fedkovich Chernivtsi National University, 58012, Chernivtsi, Ukraine

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Identifiers

DOI

10.12693/APhysPolA.122.1039