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2012 | 122 | 6 | 1039-1041
Article title

Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

Content
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EN
Abstracts
EN
Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum (ħω > E_{g}).
Keywords
Year
Volume
122
Issue
6
Pages
1039-1041
Physical description
Dates
published
2012-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n619kz
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