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2012 | 122 | 6 | 1029-1030
Article title

Pressure-Driven Reordering of Valence Band States in AlGaN/AlN Quantum Wells

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Languages of publication
EN
Abstracts
EN
We study theoretically the influence of external hydrostatic pressure on the valence band structure in [0001]-oriented Al_{x}Ga_{1-x}N/AlN quantum wells used in deep-ultraviolet light emitting devices. The calculations performed using the multi-band k·p method with excitonic effects show that for Al_{x}Ga_{1-x}N/AlN quantum wells with x = 0.7 and quantum well width of 1.5 nm, reordering of the topmost valence subbands having different symmetries occurs with increasing pressure. In these structures, at low pressure values the topmost valence level is of Γp_9 symmetry whereas it changes to the Γp_7 state for pressures about 2.5 GPa. We also find that the excitonic effects increase the critical value of pressure at which the change in the polarization of the emitted light occurs to 7 GPa. This behavior is opposite to the pressure-dependent reordering of the topmost valence band states in thin GaN/AlGaN quantum wells which occurs from Γp_7 to Γp_9 states.
Keywords
EN
Year
Volume
122
Issue
6
Pages
1029-1030
Physical description
Dates
published
2012-12
References
  • 1. K.B. Nam, J. Li, M.L. Nakarmi, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 84, 5264 (2004)
  • 2. R.G. Banal, M. Funato, Y. Kawakami, Phys. Rev. B 79, 121308 (2009)
  • 3. W. Bardyszewski, S.P. Łepkowski, Phys. Rev. B 85, 035318 (2012)
  • 4. T.K. Sharma, D. Naveh, E. Towe, Phys. Rev. B 84, 035305 (2011)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n616kz
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