Electrostatic Gates for GaN/AlGaN Quantum Point Contacts

• Authors: M. Czapkiewicz , G. Cywiński , K. Dybko , M. Siekacz , P. Wolny , S. Gierałtowska , E. Guziewicz , C. Skierbiszewski , J. Wróbel
• Languages of publication: EN

Abstracts

EN

We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of HfO_2 or Al_2O_3/HfO_2 composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current I_g< 10^{-11} A at gate voltages |V_g| < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at V_g = - 3.5 V at a cost of I_g ≈ 10^{-6} A, which has been identified as a bulk leakage current.

Keywords

EN

73.40.Qv; 73.61.Ng; 73.23.-b

Discipline

• 73.23.-b: Electronic transport in mesoscopic systems
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 73.61.Ng: Insulators

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1026-1028

Dates

published

2012-12

Contributors

author

M. Czapkiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

G. Cywiński

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Siekacz

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

P. Wolny

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

C. Skierbiszewski

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

J. Wróbel

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

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Identifiers

DOI

10.12693/APhysPolA.122.1026