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2012 | 122 | 6 | 1022-1025
Article title

Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells

Content
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EN
Abstracts
EN
Model of hopping excitons is applied to study the carrier dynamics in GaInNAs/GaAs quantum well system. Impact of parameters describing localizing states (i.e., an average energy and density) on carrier dynamics in GaInNAs material is investigated theoretically. It is shown how those parameters affect the quantities that can be extracted from time resolved photoluminescence experiments. It is shown that obtained simulations can be very helpful in the interpretation of the experimental data.
Keywords
EN
Year
Volume
122
Issue
6
Pages
1022-1025
Physical description
Dates
published
2012-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n614kz
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