Photoluminescence Dynamics of GaN/Si Nanowires

• Authors: K. Korona , Z. Zytkiewicz , P. Perkowska , J. Borysiuk , J. Binder , M. Sobanska , K. Klosek
• Languages of publication: EN

Abstracts

EN

In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes n^2 (Langevin) term and describes well the non-exponential dynamics of the excitonic band.

Keywords

EN

78.55.Cr; 73.22.-f; 78.47.jd

Discipline

• 78.55.Cr: III-V semiconductors
• 78.47.jd: Time resolved luminescence
• 73.22.-f: Electronic structure of nanoscale materials and related systems

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 6
• Pages: 1001-1003

Dates

published

2012-12

Contributors

author

K. Korona

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

Z. Zytkiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Perkowska

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Borysiuk

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Binder

• Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

M. Sobanska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Klosek

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

References

• 1. L. Geelhaar, C. Chèze, B. Jenichen, O. Brandt, C. Pfüller, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G.P. Dimitrakopulos, T. Karakostas, L. Lari, P.R. Chalker, M.H. Gass, H.Riechert, IEEE J. Sel. Top. Quant. Electron. 17, 878 (2011)
• 2. O. Brandt, C. Pfüller, C. Chèze, L. Geelhaar, H. Riechert, Phys. Rev. B 81, 045302 (2010)
• 3. A. Das, P. Bhattacharya, A. Banerjee, M. Jankowski, Phys. Rev. B 85, 195321 (2012)
• 4. R. Stępniewski, K.P. Korona, A. Wysmołek, J.M. Baranowski, K. Pakuła, M. Potemski, G. Martinez, I. Grzegory, S. Porowski, Phys. Rev. B 56, 15151 (1997)
• 5. P. Corfdir, P. Lefebvre, J. Ristić, P. Valvin, E. Calleja, A. Trampert, J.-D. Ganière, B. Deveaud-Plédran, J. Appl. Phys. 105, 013113 (2009)
• 6. M. Ueta, H. Kanzaki, K. Kobayashi, Y. Toyozawa, E. Hanamura, Excitonic Processes in Solids, Springer-Verlag, Berlin 1986
• 7. K.P. Korona, J. Kuhl, J.M. Baranowski, S. Porowski, Phys. Status Solidi B 216, 85 (1999)
• 8. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 56, R10024 (1997)
• 9. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L.F. Eastman, J. Phys., Condens. Matter 14, 3399 (2002)
• 10. K.P. Korona, A. Drabińska, P. Caban, W. Strupiński, J. Appl. Phys. 105, 083712 (2009)
• 11. K.P. Korona, A. Wysmołek, K. Pakuła, R. Stępniewski, J.M. Baranowski, I. Grzegory, B. Łucznik, M. Wróblewski, S. Porowski, Appl. Phys. Lett. 69, 788 (1996)
• 12. U. Albrecht, H. Bässler, Phys. Status Solidi B 191, 455 (1995)

Identifiers

DOI

10.12693/APhysPolA.122.1001