The Influence of Humidity on the Resistance Structures with Graphene Sensor Layer

• Authors: T. Pustelny , M. Setkiewicz , S. Drewniak , E. Maciak , A. Stolarczyk , M. Procek , M. Urbańczyk , K. Gut , Z. Opilski , I. Pasternak , W. Strupinski
• Languages of publication: EN

Abstracts

EN

In the paper the results of investigations are presented concerning the influence of humidity of air on the resistance of a gas sensor structure with a graphene layer. The affects of nitrogen dioxide and humidity action on graphene were studied. We indicated that humidity might play an important role in determining the gas sensing properties of the graphene layer. In the paper it has been shown that in the case of a nitrogen oxide sensor, the reaction of NO_2 with water vapour can generate permanent defects in graphene.

Keywords

EN

07.07.Df; 42.81.Pa; 82.47.Rs

Discipline

• 07.07.Df: Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
• 82.47.Rs: Electrochemical sensors
• 42.81.Pa: Sensors, gyros

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 5
• Pages: 870-873

Dates

published

2012-11

Contributors

author

T. Pustelny

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

M. Setkiewicz

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

S. Drewniak

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

E. Maciak

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

A. Stolarczyk

• Department of Physical Chemistry and Technology of Polymers, Silesian University of Technology, Strzody 9, 44-100 Gliwice, Poland

author

M. Procek

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

M. Urbańczyk

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

K. Gut

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

Z. Opilski

• Department of Optoelectronics, Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

I. Pasternak

• Institute of Electronic Materials Technology (ITME), Wólcz'yńska 133, 01-919 Warsaw, Poland

author

W. Strupinski

• Institute of Electronic Materials Technology (ITME), Wólcz'yńska 133, 01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.122.870