Tuning Optical Absorption Edge by Composition and Temperature in TlGaS_{2x}Se_{2(1-x)} Layered Mixed Crystals (0 ≤ x ≤ 1)

• Authors: N. Gasanly
• Languages of publication: EN

Abstracts

EN

Optical properties of TlGaS_{2x}Se_{2(1-x)} mixed crystals (0 ≤ x ≤1) have been studied using the transmission and reflection measurements in the wavelength range of 400-1100 nm. The optical indirect band gap energies were determined through the analysis of the absorption data. It was found that the energy band gaps increase with increase of sulfur atoms content in TlGaS_{2x}Se_{2(1-x)} mixed crystals. From the transmission measurements carried out in the temperature range of 10-300 K, the rates of change of the indirect band gaps with temperature were established for the different compositions of mixed crystals studied.

Keywords

EN

78.20.Ci   78.40.-q   78.40.Fy  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 4
• Pages: 728-731

Dates

published

2012-10

received

2011-11-10

(unknown)

2012-07-31

References

• [1] A.M. Panich, J. Phys., Condens. Matter 20, 293202 (2008)
• [2] K.A. Yee, A. Albright, J. Am. Chem. Soc. 113, 6474 (1991)
• [3] Y. Shim, W. Okada, K. Wakita, N. Mamedov, J. Appl. Phys. 102, 083537 (2007)
• [4] M. Hanias, A. Anagnostopoulos, K. Kambas, J. Spiridelis, Mater. Res. Bull. 27, 25 (1992)
• [5] I.M. Ashraf, M.M. Abdel-Rahman, A.M. Badr, J. Phys. D, Appl. Phys. 36, 109 (2003)
• [6] A. Kato, M. Nishigaki, N. Mamedov, M. Yamazaki, S. Abdullaeva, E. Kerimova, H. Uchiki, S. Iida, J. Phys. Chem. Solids 64, 1713 (2003)
• [7] M.M. El Nahass, M.M. Sallam, S.A. Rahman, E.M. Ibrahim, Solid State Sci. 8, 488 (2008)
• [8] V. Grivickas, V. Bikbajevas, P. Grivickas, Phys. Status Solidi B 243, R31 (2006)
• [9] B. Gurbulak, S. Duman, Phys. Scr. 77, 025702 (2008)
• [10] K.R. Allakhverdiev, Solid State Commun. 111, 253 (1999)
• [11] N.M. Gasanly, Acta Phys. Pol. A 110, 471 (2006)
• [12] A.A. Volkov, Yu.G. Goncharov, G.V. Kozlov, K.R. Allakhverdiev, R.M. Sardarly, Sov. Phys.-Solid State 26, 1668 (1984)
• [13] N.M. Gasanly, A.F. Goncharov, N.N. Melnik, A.S. Ragimov, V.I. Tagirov, Phys. Status Solidi B 116, 427 (1983)
• [14] K.R. Allakhverdiev, T.G. Mamedov, B.G. Akinoglu, S. Ellialtioglu, Turkish J. Phys. 18, 1 (1994)
• [15] O. Karabulut, M. Parlak, G.M. Mamedov, J. Alloys Comp. 429, 50 (2007)
• [16] A.E. Bakhyshov, S. Boules, F.E. Faradzhov, M.S. Mamedov, V.I. Tagirov, Phys. Status Solidi B 95, K121 (1979)
• [17] N.M. Gasanly, J. Korean Phys. Soc. 48, 914 (2006)
• [18] N.M. Gasanly, Cryst. Res. Technol. 45, 525 (2010)
• [19] J.I. Pankove, Optical Processes in Semiconductors, Prentice-Hall, New Jersey 1971
• [20] F. Yakuphanoglu, J. Phys. Chem. Solids 69, 949 (2008)
• [21] J.R. Drabble, H.J. Goldsmid, Thermal Conduction in Semiconductors, Pergamon Press, Oxford 1961
• [22] M. Hanias, A. Anagnostopoulos, K. Kambas, J. Spiridelis, Physica B 160, 154 (1989)

Identifiers

DOI

10.12693/APhysPolA.122.728