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2012 | 122 | 4 | 698-703
Article title

Metal-Semiconductor Transition on the Surface and in the Bulk of Europium Hydride Thin Film

Content
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Languages of publication
EN
Abstracts
EN
Thin europium films (20-50 nm thick) on a glass substrate were transformed into EuH_x (0 < x < 2) by interaction with H_2 introduced into the reactor in successive calibrated doses. By measuring the pressure, the hydrogen uptake (H/Eu) was determined at every step of the reaction. In situ monitoring of bulk properties (electrical resistance R(H/Eu), relative transparency to light T(H/Eu)/T_0 and (H/Eu) dependent light transparency spectrum) confirms metal-semiconductor transition at room temperature. Both the electrical resistance and optical transparency of the film strongly increase with hydrogen concentration as a consequence of the resulting increase of the content of semiconducting dihydride. Moreover, the course of work function changes ΔΦ(H/Eu) indicates inversion of the charge-transfer direction on the surface. The transition at room temperature from positively to negatively polarized hydrogen adsorbate was observed in situ during hydrogen uptake. As a result, the work function at equilibrium state varies with hydrogen content from +18 to -18 mV with respect to pure metal film, reflecting the change of "mirror potential" generated on the surface due to the accumulation of hydrogen adsorbates in the subsurface region.
Keywords
Year
Volume
122
Issue
4
Pages
698-703
Physical description
Dates
published
2012-10
received
2012-04-17
(unknown)
2012-08-30
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n411kz
Identifiers
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